Pyroelectric and photovoltaic properties of Nb-doped PZT thin films

Nb-doped lead zirconate titanate (PZT) films with up to 12 at. % of Nb were co-sputtered from oxide PZT and metallic targets at a substrate temperature 600 °C. Up 4 was doped into the perovskite structure formation B-site cation vacancies for charge compensation. The preferential (111) orientation decreased Nb-doping within solid solution region. ferroelectric response affected by large values internal field present in samples (e.g., −84.3 kV cm−1 Nd films). As-deposited unpoled showed pyroelectric coefficient due self-poling. increased complex dependence on applied bias. photovoltaic effect observed films. value photocurrent A/B ratio. combined photovoltaic–pyroelectric measured current 47% upon light illumination.